Vyacheslav G Storchak et al 2004 J. Phys.: Condens. Matter 16 S4761 doi:10.1088/0953-8984/16/40/018
Formation and dynamics of muonium centres in semiconductors—a new approach
Vyacheslav G Storchak1,4, Dmitry G Eshchenko2 and Jess H Brewer3
Show affiliationsVarious processes of muonium atom formation in semiconductors via electron capture by a positive muon have been studied using μSR techniques, including those with applied electric field. Experiments in GaAs, GaP and CdS suggest that the electron is initially captured into a highly excited state, from which the cascade down to the muonium ground state goes through an intermediate weakly bound state determined by the electron effective mass and the dielectric constant of the host. The electronic structure of this weakly bound state is shown to be hydrogenic. The nature of the final (on the μSR timescale) muonium state depends on the energy releasing mechanisms in the cascade process. We suggest that muonium dynamics in semiconductors (including the effects of electric and magnetic fields and temperature) reflect the electron dynamics in weakly bound muonium state(s) in which the electron is delocalized over distances of about 100 Å.
- PACS
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71.15.Qe Excited states: methodology
77.22.Ch Permittivity (dielectric function)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
- Subjects
- Dates
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Issue 40 (13 October 2004)
Received 27 January 2004
Published 24 September 2004
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Formation and dynamics of muonium centres in semiconductors—a new approach
Vyacheslav G Storchak et al 2004 J. Phys.: Condens. Matter 16 S4761
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Magnetic susceptibility, exchange interactions and spin-wave spectra in the local spin density approximation
M I Katsnelson and A I Lichtenstein 2004 J. Phys.: Condens. Matter 16 7439
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Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride
J Nord et al 2003 J. Phys.: Condens. Matter 15 5649
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The vacancy–nitrogen–hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material
J P Goss et al 2003 J. Phys.: Condens. Matter 15 S2903
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