Vyacheslav G Storchak et al 2004 J. Phys.: Condens. Matter 16 S4761 doi:10.1088/0953-8984/16/40/018
Vyacheslav G Storchak1,4, Dmitry G Eshchenko2 and Jess H Brewer3
Show affiliationsVarious processes of muonium atom formation in semiconductors via electron capture by a positive muon have been studied using μSR techniques, including those with applied electric field. Experiments in GaAs, GaP and CdS suggest that the electron is initially captured into a highly excited state, from which the cascade down to the muonium ground state goes through an intermediate weakly bound state determined by the electron effective mass and the dielectric constant of the host. The electronic structure of this weakly bound state is shown to be hydrogenic. The nature of the final (on the μSR timescale) muonium state depends on the energy releasing mechanisms in the cascade process. We suggest that muonium dynamics in semiconductors (including the effects of electric and magnetic fields and temperature) reflect the electron dynamics in weakly bound muonium state(s) in which the electron is delocalized over distances of about 100 Å.
71.15.Qe Excited states: methodology
77.22.Ch Permittivity (dielectric function)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
Issue 40 (13 October 2004)
Received 27 January 2004
Published 24 September 2004
Vyacheslav G Storchak et al 2004 J. Phys.: Condens. Matter 16 S4761
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