A Bhouri et al 2004 J. Phys.: Condens. Matter 16 511 doi:10.1088/0953-8984/16/3/027
A Bhouri1, H Mejri1, F Ben Zid1, H Belmabrouk1, M Said1, N Bouarissa2 and J-L Lazzari3
Show affiliationsWe report band offset calculations for lattice-matched and pseudomorphically strained InxGa1−xN/InyGa1−yN heterointerfaces using the model solid theory combined with ab initio calculations. From the results obtained, we have calculated the bandgap of bulk InxGa1−xN on GaN as a function of the indium composition. We have also simulated the band edges of an InxGa1−xN/GaN heterostructure. A self-consistent analysis is made to investigate the effect of strains on the interband transitions with the aim of achieving emissions at both visible and near infrared wavelengths. An attempt to explain the results obtained will be presented.
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
78.30.Fs III-V and II-VI semiconductors
Issue 3 (28 January 2004)
Received 2 July 2003, in final form 30 October 2003
Published 9 January 2004
A Bhouri et al 2004 J. Phys.: Condens. Matter 16 511
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