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Coulomb blockade and quantum tunnelling in an array of metallic grains

V Tripathi, M Turlakov and Y L Loh

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We study the effects of Coulomb interaction and inter-grain quantum tunnelling in an array of metallic grains using the phase-functional approach for temperatures T well below the charging energy Ec of individual grains yet large compared to the level spacing in the grains. When the inter-grain tunnelling conductance g\gg 1 , the conductivity σ in d dimensions decreases logarithmically with temperature (\sigma /\sigma_{0}\sim
1-\frac {1}{\pi gd}\ln (gE_{\mathrm {c}}/T) ) (Panyukov and Zaikin 1991 Phys. Rev. Lett. 67 3168, Goppert and Grabert 2000 Eur. Phys. J. B 16 687, Efetov and Tschersich 2002 Europhys. Lett. 59 114), while for g\rightarrow 0 , the conductivity shows simple activated behaviour (\sigma \sim \exp (-E_{\mathrm
{c}}/T) ). We show, for bare tunnelling conductance g \gtrsim 1 , that the parameter \gamma \equiv g(1-2/(g\pi)\ln (gE_{\mathrm {c}}/T)) determines the competition between charging and tunnelling effects. At low enough temperatures in the regime 1\gtrsim \gamma \gg 1/\sqrt {\beta E_{\mathrm
{c}}} , a charge is shared among a finite number N=\sqrt { (E_{\mathrm {c}}/T)/\ln (\pi
/2\gamma z)} of grains, and we find a soft activation behaviour of the conductivity, \sigma \sim
z^{-1}\exp (-2\sqrt {(E_{\mathrm {c}}/T)\ln (\pi /2\gamma z)}) , where z is the effective coordination number of a grain.


PACS

73.23.Hk Coulomb blockade; single-electron tunneling

Subjects

Surfaces, interfaces and thin films

Dates

Issue 28 (21 July 2004)

Received 28 November 2003

Published 2 July 2004



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