Z G Qian et al 2004 J. Phys.: Condens. Matter 16 R381 doi:10.1088/0953-8984/16/12/R01
Z G Qian1, W Z Shen1,3, H Ogawa2 and Q X Guo2
Show affiliationsWe review recent experimental studies on the lattice dynamical properties of novel semiconductor InN thin films. Most of the experimental results are concerned with Raman scattering as well as infrared spectroscopic studies. The emphasis is on the structure of Brillouin zone centre (Γ point) phonons in InN (including both the wurtzite and zinc blende structures), coupling between the electron excitation (plasmon) and the longitudinal optical phonon, disorder-activated modes, temperature- and pressure-dependences of the lattice vibration modes, micro-Raman imaging, and the lattice vibration in nitride alloys, superlattices, quantum wells, and quantum dots, etc. This article also presents some prospects on Raman scattering studies in the related materials and structures.
01.30.Rr Surveys and tutorial papers; resource letters
68.55.-a Thin film structure and morphology
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.30.Fs III-V and II-VI semiconductors
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 12 (31 March 2004)
Received 10 November 2003, in final form 5 January 2004
Published 12 March 2004
Z G Qian et al 2004 J. Phys.: Condens. Matter 16 R381
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T P Singh and Louis Witten 1997 Class. Quantum Grav. 14 3489
Wenzhong Liu et al 2009 Meas. Sci. Technol. 20 125802
Martin Schweiger et al 2005 Phys. Med. Biol. 50 2365
David D Hsu and David B Graves 2003 J. Phys. D: Appl. Phys. 36 2898
Abhinav Kranti and G Alastair Armstrong 2006 Semicond. Sci. Technol. 21 1563
Yungui Gong and Anzhong Wang 2006 Class. Quantum Grav. 23 3419
G C Das and D Chakravorty 1982 J. Phys. D: Appl. Phys. 15 2255
D R Bowler et al 2002 J. Phys.: Condens. Matter 14 2781