B Sass et al 2004 J. Phys.: Condens. Matter 16 77 doi:10.1088/0953-8984/16/1/008
Structural and electronic properties of epitaxial V2O3 thin films
B Sass1, C Tusche1, W Felsch1, N Quaas2, A Weismann2 and M Wenderoth2
Show affiliationsThin films of V2O3 with thickness 4–300 nm were grown on 
-oriented sapphire substrates by reactive dc magnetron sputtering. X-ray diffraction, pole figure measurements and scanning tunnelling microscopy show high crystallinity and epitaxy to the substrate with a faceted surface structure, and the absence of strain. Measurements of the electrical resistivity, scanning tunnelling and x-ray absorption spectroscopy show a metal–insulator transition near 150 K that is connected with the opening of an energy gap and a characteristic modification of the absorption spectrum at the vanadium-2p and oxygen-1s edges. These observations reveal that the 
films have bulk-like properties.
- PACS
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.30.+h Metal-insulator transitions and other electronic transitions
68.35.B- Structure of clean surfaces (and surface reconstruction)
- Subjects
- Dates
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Issue 1 (14 January 2004)
Received 23 October 2003
Published 15 December 2003
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Structural and electronic properties of epitaxial V2O3 thin films
B Sass et al 2004 J. Phys.: Condens. Matter 16 77
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