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Hydrogen molecules in 4H-SiC and 2H-GaN

T A G Eberlein1, L Huggett1, R Jones1 and P R Briddon2

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We present the results of theoretical calculations of the structure, diffusion and rotational energies, and the ro-vibrational modes, of the hydrogen molecule in the hexagonal part of 4H-SiC and in 2H-GaN. In both materials, the molecule is stable and aligned along the c-axis. Its rotational barrier is sufficiently large that ortho- and para-forms have almost degenerate ro-vibrational modes. The origin of two modes at 4090 and 4110 cm−1 attributed to molecules observed in multi-transmission FTIR experiments on Mg doped insulating GaN grown by OMVPE is discussed.


PACS

66.30.-h Diffusion in solids

61.66.Fn Inorganic compounds

78.30.Fs III-V and II-VI semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 39 (8 October 2003)

Received 7 August 2003

Published 19 September 2003



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