X D Pi et al 2003 J. Phys.: Condens. Matter 15 S2825 doi:10.1088/0953-8984/15/39/007
X D Pi1, C P Burrows1, P G Coleman1, R M Gwilliam2 and B J Sealy2
Show affiliationsCzochralski silicon samples implanted to a dose of 5 × 1015 cm−2 with 0.5 MeV O and to a dose of 1016 cm−2 with 1 MeV Si, respectively, have been studied by positron annihilation spectroscopy. The evolution of divacancies to vacancy (V)–O complexes is out-competed by V–interstitial (I) recombination at 400 and 500 °C in the Si- and O-implanted samples; the higher oxygen concentration makes the latter temperature higher. The defective region shrinks as the annealing temperature increases as interstitials are injected from the end of the implantation range (Rp). VmOn (m> n) are formed in the shallow region most effectively at 700 °C for both Si and O implantation. VxOy (x< y) are produced near Rp by the annealing. At 800 °C, implanted Si ions diffuse and reduce m and implanted O ions diffuse and increase n in VmOn. All oxygen-related vacancy-type defects appear to begin to dissociate at 950 °C, with the probable formation of oxygen clusters. At 1100 °C, oxygen precipitates appear to form just before Rp in O-implanted silicon.
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters
Issue 39 (8 October 2003)
Received 7 August 2003
Published 19 September 2003
X D Pi et al 2003 J. Phys.: Condens. Matter 15 S2825
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