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Scanning tunnelling microscopy and spectroscopy on organic PTCDA films deposited on sulfur passivated GaAs(001)

N Nicoara1, O Custance1, D Granados2, J M García2, J M Gómez-Rodríguez1, A M Baró1 and J Méndez3

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Deposition of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) on sulfur passivated gallium arsenide S-GaAs(001) surfaces is investigated by scanning tunnelling microscopy and scanning tunnelling spectroscopy. The surface morphology and the film structure are studied for the multilayer growth of the organic molecules. Spectroscopic results for both clean substrate and ordered areas of PTCDA are shown in this work. We have measured I–V plots at different tip–sample distances, avoiding deformation of the organic layer. Under proper experimental conditions, a gap value of 2.2 eV has been measured on PTCDA crystals, in good agreement with the expected value for PTCDA (2.2–2.55 eV).


PACS

81.65.Rv Passivation

68.55.A- Nucleation and growth

73.61.Ph Polymers; organic compounds

68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

68.47.Fg Semiconductor surfaces

68.35.B- Structure of clean surfaces (and surface reconstruction)

Subjects

Soft matter, liquids and polymers

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 38 (1 October 2003)

Received 26 June 2003

Published 12 September 2003



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