N Nicoara et al 2003 J. Phys.: Condens. Matter 15 S2619 doi:10.1088/0953-8984/15/38/003
N Nicoara1, O Custance1, D Granados2, J M García2, J M Gómez-Rodríguez1, A M Baró1 and J Méndez3
Show affiliationsDeposition of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) on sulfur passivated gallium arsenide S-GaAs(001) surfaces is investigated by scanning tunnelling microscopy and scanning tunnelling spectroscopy. The surface morphology and the film structure are studied for the multilayer growth of the organic molecules. Spectroscopic results for both clean substrate and ordered areas of PTCDA are shown in this work. We have measured I–V plots at different tip–sample distances, avoiding deformation of the organic layer. Under proper experimental conditions, a gap value of 2.2 eV has been measured on PTCDA crystals, in good agreement with the expected value for PTCDA (2.2–2.55 eV).
68.55.A- Nucleation and growth
73.61.Ph Polymers; organic compounds
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
Issue 38 (1 October 2003)
Received 26 June 2003
Published 12 September 2003
N Nicoara et al 2003 J. Phys.: Condens. Matter 15 S2619
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