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Optically driven silicon-based quantum gates with potential for high-temperature operation

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A M Stoneham, A J Fisher and P T Greenland

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LETTER TO THE EDITOR

We propose a new approach to constructing gates for quantum information processing, exploiting the properties of impurities in silicon. Quantum information, embodied in electron spins bound to deep donors, is coupled via optically induced electronic excitation. Gates are manipulated by magnetic fields and optical light pulses; individual gates are addressed by exploiting spatial and spectroscopic selectivity. Such quantum gates do not rely on small energy scales for operation, so might function at or near room temperature. We show the scheme can produce the classes of gates necessary to construct a universal quantum computer.


PACS

03.67.Lx Quantum computation architectures and implementations

42.50.-p Quantum optics

85.30.De Semiconductor-device characterization, design, and modeling

Subjects

Computational physics

Electronics and devices

Semiconductors

Optics, quantum optics and lasers

Quantum information and quantum mechanics

Dates

Issue 27 (16 July 2003)

Received 19 June 2003

Published 27 June 2003



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