J W Ding et al 2003 J. Phys.: Condens. Matter 15 L439 doi:10.1088/0953-8984/15/27/101
J W Ding1,2, X H Yan1, J X Cao1,2, D L Wang1,2, Y Tang1 and Q B Yang1
Show affiliationsTo describe accurately the electronic structures of carbon nanotubes, a semi-empirical tight-binding approach is presented in which the main intrinsic curvatures have been fully taken into account. The calculated electronic structures and band gaps are consistent with experimental measurements. Studies of the relative importance of various intrinsic curvatures show that each curvature has a contribution of varying importance to the curvature-induced band gap. Additionally, under both uniaxial and torsional strain, semiconductor–metal–semiconductor phase transitions have been observed for primary metallic carbon nanotubes. The critical stress of the transition and the gap's sensitivity with stress are dependent on both the diameter and chirality of nanotubes, which is at variance with previous predictions.
Issue 27 (16 July 2003)
Received 23 May 2003
Published 27 June 2003
J W Ding et al 2003 J. Phys.: Condens. Matter 15 L439
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