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Implantation depth of size-selected silver clusters into graphite

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D J Kenny1,3, R E Palmer1, C F Sanz-Navarro2 and R Smith2

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LETTER TO THE EDITOR

We have investigated the implantation of size-selected Ag7- clusters into the graphite surface as a function of kinetic energy (E) from 1.0 to 5.5 keV, via scanning tunnelling microscopy together with molecular dynamics simulations. By utilizing thermal oxidation of the graphite surface to expand laterally the defects created via implantation, we find that the cluster implantation depth is proportional to (E)1/2 and hence the velocity of the bombarding cluster. By careful control of the oxidation temperature, we also demonstrate that even moderate temperatures (923-1123 K), considerably lower than the melting point of graphite (4450 K), lead to significant annealing of the defects formed through cluster impact, accounting for the shape of the experimental depth distributions observed.


PACS

61.72.up Other materials

81.65.Cf Surface cleaning, etching, patterning

68.49.-h Surface characterization by particle-surface scattering

68.47.Jn Clusters on oxide surfaces

Subjects

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 8 (4 March 2002)

Received 14 November 2001

Published 15 February 2002



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