J P Goss et al 2002 J. Phys.: Condens. Matter 14 12843 doi:10.1088/0953-8984/14/48/324
J P Goss1,5, T A G Eberlein1, R Jones1, N Pinho1, A T Blumenau2, T Frauenheim2, P R Briddon3 and S Öberg4
Show affiliationsSelf-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.
61.72.J- Point defects and defect clusters
61.72.Lk Linear defects: dislocations, disclinations
61.72.Nn Stacking faults and other planar or extended defects
Issue 48 (9 December 2002)
Received 27 September 2002
Published 22 November 2002
J P Goss et al 2002 J. Phys.: Condens. Matter 14 12843
J P Goss et al 2003 J. Phys.: Condens. Matter 15 S2903
J P Goss et al 2000 J. Phys.: Condens. Matter 12 10257
L L Lumata et al 2008 J. Phys.: Conf. Ser. 132 012014
C Cheng et al 1988 J. Phys. C: Solid State Phys. 21 1049
C Cheng et al 1990 J. Phys.: Condens. Matter 2 5115
Kostas Glampedakis 2005 Class. Quantum Grav. 22 S605
Zhongzhi Zhang et al J. Stat. Mech. (2008) P09008
Kazuhiko Furuya et al 2001 J. Phys.: Condens. Matter 13 3519
A Tip et al 2000 J. Phys. A: Math. Gen. 33 6223