A T Blumenau et al 2002 J. Phys.: Condens. Matter 14 12741 doi:10.1088/0953-8984/14/48/311
A T Blumenau1,2,6, C J Fall2, R Jones2, M I Heggie3, P R Briddon4, T Frauenheim1 and S Öberg5
Show affiliationsDensity-functional based calculations are used to investigate low energy core structures of 90° partial dislocations in diamond and 3C-SiC. In both materials dislocation glide is analysed in terms of kink formation and migration and the fundamental steps to kink migration are investigated. We find the C terminated core structure in SiC to be more mobile than the Si core. However, the Si partial is electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.
Issue 48 (9 December 2002)
Received 27 September 2002
Published 22 November 2002
A T Blumenau et al 2002 J. Phys.: Condens. Matter 14 12741
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