M I Heggie et al 2002 J. Phys.: Condens. Matter 14 12689 doi:10.1088/0953-8984/14/48/304
M I Heggie1, C P Ewels1, N Martsinovich1, S Scarle1, R Jones2, J P Goss2, B Hourahine2 and P R Briddon3
Show affiliationsWe review first-principles calculations of dislocation core structure in diamond, and draw out similarities with and differences from silicon. Primary differences are in hybridization changes in carbon and in the different behaviour of H interacting with dislocations. In both materials, condensation of a homogeneous distribution of H atoms should result, first, in formation of small H aggregates with the appearance of a glide dislocation dipole and, second, in formation of larger platelets based on the half-stacking-fault model.
61.72.Nn Stacking faults and other planar or extended defects
Issue 48 (9 December 2002)
Received 1 October 2002
Published 22 November 2002
M I Heggie et al 2002 J. Phys.: Condens. Matter 14 12689
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