H Lei et al 2002 J. Phys.: Condens. Matter 14 7963 doi:10.1088/0953-8984/14/34/315
H Lei1,4, H S Leipner1,4, N Engler2 and J Schreiber3
Show affiliationsRaman scattering and cathodoluminescence experiments have been performed to investigate the effect of dislocations on the spatial distribution of point defects and on the free electron concentration in n-type GaAs:Si. An experimentally extended increase of the free electron and (SiGaVGa)2− complex concentrations from the matrix to the dislocation is explained as resulting from the formation of arsenic precipitates around the dislocation by means of computer simulations based on a diffusion–aggregation model.
61.72.Yx Interaction between different crystal defects; gettering effect
78.30.Fs III-V and II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
Issue 34 (2 September 2002)
Received 15 May 2002, in final form 18 June 2002
Published 15 August 2002
H Lei et al 2002 J. Phys.: Condens. Matter 14 7963
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