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Interaction of metal with oxide films: V on Cr2O3(0001)/Re(0001) and Cr on V2O3(0001)/Re(0001)

Wende Xiao, Kan Xie, Qinlin Guo1 and E G Wang

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The interactions of V with Cr2O3(0001) films and Cr with V2O3(0001) films at room temperature are studied using x-ray photoelectron spectroscopy and low-energy-electron diffraction. The results show that the deposited V is oxidized and the Cr2O3(0001) surface is reduced at the initial coverage due to the interaction of V with the Cr2O3 substrate; V becomes metallic at V coverage greater than 5 monolayer equivalent. Full oxidization of the deposited vanadium cannot be achieved by O2 exposure at room temperature for 20 min. However, V2O3(0001) films have been observed after heating the sample to 600-700 K in oxygen ambient at 1×10-7 mbar. Similar results have been obtained for the Cr/V2O3(0001)/Re(0001) system.


PACS

79.60.Bm Clean metal, semiconductor, and insulator surfaces

68.47.Gh Oxide surfaces

79.60.Dp Adsorbed layers and thin films

61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

81.40.Gh Other heat and thermomechanical treatments

81.65.Mq Oxidation

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 25 (1 July 2002)

Received 6 December 2001, in final form 21 March 2002

Published 14 June 2002



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