A V Akimov et al 2002 J. Phys.: Condens. Matter 14 3445 doi:10.1088/0953-8984/14/13/304
A V Akimov1, S A Cavill1, A J Kent1, N M Stanton1, T Wang2 and S Sakai2
Show affiliationsThe effect of well width on both the photoluminescence (PL) and phonon emission in optically excited InGaN multiple quantum well (MQW) samples has been investigated. For narrow MQW samples (w<2.5 nm), the low-temperature PL quantum efficiency is close to unity with the phonon emission being due mainly to carrier relaxation in the QWs. For wider MQWs samples the PL quantum efficiency is reduced and the intensity of the phonon emission increases. We explain this in terms of the non-radiative recombination processes in the QWs which result in phonon emission and compete with the radiative process.
Issue 13 (8 April 2002)
Received 9 July 2001
Published 22 March 2002
A V Akimov et al 2002 J. Phys.: Condens. Matter 14 3445
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