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Bound excitons in GaN

B Monemar

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The electronic structure of bound excitons in GaN is discussed, with reference to available optical data. Emphasis is given to the neutral-donor and neutral-acceptor spectra, which are the most prominent ones in the experimental photoluminescence data. Two dominant donor bound excitons are observed with photoluminescence lines just above 3.47 eV at 2 K in unstrained samples, tentatively associated with Si and O shallow donors. Several acceptor bound excitons are present; the most prominent one with a photoluminescence line at about 3.466 eV is tentatively assigned to the Mg acceptor. We attempt an explanation of the available data from magneto-optical experiments on this line in terms of a spin-like acceptor hole, as observed in independent magnetic resonance data. Characteristic deep emissions related to P and As doping are reported; they may be interpreted in terms of isoelectronic bound excitons. Excitons bound to structural defects in GaN are also briefly discussed.


PACS

71.35.-y Excitons and related phenomena

61.72.uj III–V and II–VI semiconductors

71.20.Nr Semiconductor compounds

78.55.Cr III-V semiconductors

78.20.Ls Magnetooptical effects

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 32 (13 August 2001)

Received 14 May 2001

Published 26 July 2001



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