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Hall emf features in bipolar media

A Konin and R Raguotis

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An expression for the Hall electromotive force (emf) in a bipolar bounded semiconductor sample is obtained by taking into account both volume and surface recombination rates. It is shown that the Hall emf value has non-linear dependence on the sample thickness. The Hall emf value also depends significantly on the surface parameters, such as surface recombination rates and surface conductivity of carriers.


PACS

72.20.My Galvanomagnetic and other magnetotransport effects

72.20.Pa Thermoelectric and thermomagnetic effects

68.47.Fg Semiconductor surfaces

72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

73.25.+i Surface conductivity and carrier phenomena

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 43 (30 October 2000)

Received 26 May 2000, in final form 31 August 2000



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