A Konin and R Raguotis 2000 J. Phys.: Condens. Matter 12 9163 doi:10.1088/0953-8984/12/43/306
A Konin and R Raguotis
Show affiliationsAn expression for the Hall electromotive force (emf) in a bipolar bounded semiconductor sample is obtained by taking into account both volume and surface recombination rates. It is shown that the Hall emf value has non-linear dependence on the sample thickness. The Hall emf value also depends significantly on the surface parameters, such as surface recombination rates and surface conductivity of carriers.
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Pa Thermoelectric and thermomagnetic effects
68.47.Fg Semiconductor surfaces
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
Issue 43 (30 October 2000)
Received 26 May 2000, in final form 31 August 2000
A Konin and R Raguotis 2000 J. Phys.: Condens. Matter 12 9163
James Atkinson et al 2008 J. Phys. A: Math. Theor. 41 142001
Miju Kang et al. 2009 ApJ 701 454
R. Indebetouw et al. 2005 ApJ 619 931
V I Korobov 2004 J. Phys. B: At. Mol. Opt. Phys. 37 2331
P W Forder 1999 J. Phys. B: At. Mol. Opt. Phys. 32 4581
Subarna Mitra et al 2006 J. Phys. D: Appl. Phys. 39 4228
Richard B Larson 2003 Rep. Prog. Phys. 66 1651
Xinglong Liu and Zhongwei Jiang 2009 Smart Mater. Struct. 18 125017
Juan García Escudero and Javier García García 2005 J. Phys. A: Math. Gen. 38 6525