W Li et al 2000 J. Phys.: Condens. Matter 12 L269 doi:10.1088/0953-8984/12/15/102
W Li, I Andrienko and D Haneman
Show affiliationsWe report atomic resolution in scanning tunneling microscopy studies of porous silicon surfaces, after vacuum heat treatment at 850 °C and above. The (100) sample surfaces show some 2 × 1 reconstruction as for single-crystal (100) surfaces, but the (111) samples do not show any clear reconstructions, probably because the column tops are too small for large structures such as 7 × 7 to form. The atomic planes on the column tops are parallel to the substrate for both (100) and (111) samples, in agreement with low-energy electron diffraction studies.
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
Issue 15 (17 April 2000)
Received 25 January 2000, in final form 2 March 2000
W Li et al 2000 J. Phys.: Condens. Matter 12 L269
J M Warman et al 2009 Phys. Med. Biol. 54 3185
Chunhua Men et al 2009 Phys. Med. Biol. 54 6565
Valery V Tuchin 2005 J. Phys. D: Appl. Phys. 38 2497
C A Perottoni and J A H da Jornada 2001 J. Phys.: Condens. Matter 13 5981
Xuejun Gu et al 2009 Phys. Med. Biol. 54 6287
Jeremy C Hebden et al 2002 Phys. Med. Biol. 47 4155
C Boudou et al 2007 Phys. Med. Biol. 52 4881
Q Jackie Wu et al 2008 Phys. Med. Biol. 53 673
E F Fincham 1925 Trans. Opt. Soc. 26 239