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Classical simulations of the properties of group-III nitrides

J A Chisholm, D W Lewis and P D Bristowe

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LETTER TO THE EDITOR

We present interatomic pair potential parameters derived for the GaInAlN system. Potentials are fitted to bulk material properties, such as lattice constants and elastic and dielectric constants, and are then employed to calculate Schottky and Frenkel defect energies in GaN, InN and AlN. Schottky defects are found to be lower in energy than Frenkel defects, suggesting that vacancies are more readily formed in the group-III nitrides. The formation energies of both Schottky and Frenkel defects in all the nitrides are found to depend on the size of the cation. Solution energies indicate that InN readily dissolves in both GaN and AlN, at least at low concentration.


PACS

61.66.Fn Inorganic compounds

77.22.Ch Permittivity (dielectric function)

61.72.J- Point defects and defect clusters

62.20.D- Elasticity

Subjects

Condensed matter: electrical, magnetic and optical

Condensed matter: structural, mechanical & thermal

Dates

Issue 22 (7 June 1999)

Received 12 March 1999



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