Surya Chattopadhyaya and Kalyan Kumar Das 2004 J. Phys. B: At. Mol. Opt. Phys. 37 3355 doi:10.1088/0953-4075/37/16/011
Surya Chattopadhyaya1 and Kalyan Kumar Das
Show affiliationsThe electronic spectrum of 28Si32S+ has been studied by using relativistic configuration interaction calculations which include effective core potentials. Spectroscopic constants and potential energy curves of low-lying states within 5 eV have been computed. The spin–orbit coupling has also been included in the calculations. The vertical ionization potentials of the ground-state SiS to the ground and a few excited states of SiS+ have been calculated and compared with the experimentally derived values. The transition moment functions of some dipole allowed transitions such as B2Σ+–X2Π, B2Σ+–A2Σ+ etc have been constructed. The dipole moments of three doublets such as X2Π, A2Σ+ and B2Σ+ and three quartets such as 4Π, 4Σ+ and 4Δ of SiS+ are reported. The radiative lifetimes of a couple of excited 2Σ+ states are estimated.
31.15.vj Electron correlation calculations for atoms and ions: excited states
33.15.Ry Ionization potentials, electron affinities, molecular core binding energy
33.70.Ca Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors
Issue 16 (28 August 2004)
Received 25 May 2004
Published 29 July 2004
Surya Chattopadhyaya and Kalyan Kumar Das 2004 J. Phys. B: At. Mol. Opt. Phys. 37 3355
Michael Hörnquist 1997 J. Phys. A: Math. Gen. 30 7057
M Vasundhara et al 2005 J. Phys.: Condens. Matter 17 6025
R Saison 1968 Plasma Phys. 10 927
F Brochard-Wyart and P G de Gennes 1994 J. Phys.: Condens. Matter 6 A9
F V Bunkin et al 1987 J. Phys. B: At. Mol. Phys. 20 2937
Stefan Umbreit et al. 2005 ApJ 623 940
C Tsallis 1985 J. Phys. C: Solid State Phys. 18 6581
A H Bougourzi 1995 J. Phys. A: Math. Gen. 28 5831
R S Mane et al 2006 Nanotechnology 17 5393