Abstract
Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions (IJJ) in Bi2Sr2CaCu2O8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarized terahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions) which were fabricated using UV lithography, e-beam lithography with photoresist and e-beam lithography with a Ti selective etching technique. We will present measurements of the c-axis resistance as a function of temperature and of current–voltage characteristics of THz emitting mesas with lateral sizes ranging from 30 × 300 to 100 × 300 µm2. Furthermore, we will discuss the dependence of the characteristics of the mesa structures on the oxygen doping level of the Bi2212 crystals. We will also experimentally show that the voltage–frequency relation of the ac Josephson effect has to match the cavity resonance for successful emission.