L Kang et al 2003 Supercond. Sci. Technol. 16 1417 doi:10.1088/0953-2048/16/12/021
L Kang1, P H Wu1, J R Sh1, W X Cai1, S Z Yang1, Z M Ji1 and Z Wang2
Show affiliationsAt ambient substrate temperatures, NbN and AlN thin films as well as NbN/AlN/NbN sandwiches are prepared on single crystal MgO substrates, using direct current (dc) or radio frequency (RF) magnetron sputtering techniques. Excellent single crystal orientations of these structures are revealed by x-ray diffraction and transmission electron microscopy (TEM), while x-ray photoelectron spectroscope (XPS) shows that the stoichiometric composition of the NbN films is 1: 0.9 (Nb:N). Furthermore, AFM (atomic force microscope) scans indicate a root mean square (rms) roughness of 0.755 nm for AlN/NbN, and 0.83 nm for AlN, both over an area of 5 µm × 5 µm.
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.25.Am Superconducting device characterization, design, and modeling
Issue 12 (December 2003)
Received 17 July 2003
Published 5 November 2003
L Kang et al 2003 Supercond. Sci. Technol. 16 1417
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