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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

S Patnaik1, L D Cooley1, A Gurevich1, A A Polyanskii1, J Jiang1, X Y Cai1, A A Squitieri1, M T Naus1, M K Lee2, J H Choi2, L Belenky2, S D Bu2, J Letteri3, X Song1,2, D G Schlom3, S E Babcock1,2, C B Eom1,2, E E Hellstrom1,2 and D C Larbalestier1,2

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An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2parallel/Hc2 is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H*≈0.8Hc2(T) in untextured samples. Hc2parallel(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.


PACS

74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)

74.25.Op Mixed states, critical fields, and surface sheaths

74.25.Dw Superconductivity phase diagrams

74.25.Fy Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)

74.25.Qt Vortex lattices, flux pinning, flux creep

Subjects

Superconductivity

Dates

Issue 6 (June 2001)

Received 30 April 2001



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