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Crossover from thermally activated to steady flow in the vortex dynamics of Bi2Sr2CaCu2O8+x thin films

S L Prischepa-+,++, A Vecchione++, V N Kushnir-+, M Salvato++, A Yu Petrov-+, C Attanasio++ and L Maritato++

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We have measured the resistive transition of molecular beam epitaxy prepared Bi2Sr2CaCu2O8+x thin films in the presence of perpendicular low magnetic fields H (0 Oe<H<1100 Oe) for different values of the bias current density J (102 A cm-2<J<105 A cm-2). The experimental data show two distinct dissipative behaviours. In the low-current region (J<103 A cm-2) the electrical resistivity rho is independent on J, changing only with H, while in the high-current region (J>104 A cm-2) rho is independent of both the bias current and the magnetic field. The result is considered in terms of thermally activated flux flow-flux creep-steady flux flow crossovers. The role of the statistical distribution of the pinning energy in the vortex dynamics is discussed.


PACS

74.78.Bz High-Tc films

81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

68.55.A- Nucleation and growth

74.25.Sv Critical currents

74.25.Fy Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)

74.25.Qt Vortex lattices, flux pinning, flux creep

Subjects

Superconductivity

Surfaces, interfaces and thin films

Dates

Issue 8 (August 1999)

Received 8 March 1999



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