S L Prischepa et al 1999 Supercond. Sci. Technol. 12 533 doi:10.1088/0953-2048/12/8/311
S L Prischepa
,
, A Vecchione
, V N Kushnir
, M Salvato
, A Yu Petrov
, C Attanasio
and L Maritato![]()
We have measured the resistive transition of molecular beam epitaxy prepared Bi2Sr2CaCu2O8+x thin films in the presence of perpendicular low magnetic fields H (0 Oe<H<1100 Oe) for different values of the bias current density J (102 A cm-2<J<105 A cm-2). The experimental data show two distinct dissipative behaviours. In the low-current region (J<103 A cm-2) the electrical resistivity
is independent on J, changing only with H, while in the high-current region (J>104 A cm-2)
is independent of both the bias current and the magnetic field. The result is considered in terms of thermally activated flux flow-flux creep-steady flux flow crossovers. The role of the statistical distribution of the pinning energy in the vortex dynamics is discussed.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
74.25.Fy Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)
Issue 8 (August 1999)
Received 8 March 1999
S L Prischepa et al 1999 Supercond. Sci. Technol. 12 533
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