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Growth of epitaxial films

D G Schlom-+, S B Knapp-+, S Wozniak-+, L-N Zou++, J Park++, Y Liu++, M E Hawley§, G W Brown§, A Dabkowski||, H A Dabkowska||, R Uecker and P Reiche

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We have grown epitaxial films, n = 1, 2 and , by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase-pure films have been mapped out. Resistivity versus temperature measurements show that both a-axis and c-axis films of are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD.


PACS

74.78.Bz High-Tc films

74.25.Fy Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)

81.15.Fg Laser deposition

68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

68.55.A- Nucleation and growth

Subjects

Superconductivity

Surfaces, interfaces and thin films

Dates

Issue 12 (December 1997)

Received 22 September 1997



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