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New infra-red detectors using indium antimonide

D G Avery, D W Goodwin and Miss A E Rennie

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The paper describes the properties of InSb detectors, at room temperature, using the photoconductive process, and experimental work on sensitive p-n junction detectors, cooled to 90° K, used as photo-voltaic cells.


PACS

85.60.Gz Photodetectors (including infrared and CCD detectors)

Subjects

Electronics and devices

Optics, quantum optics and lasers

Dates

Issue 10 (October 1957)

Received 10 January 1957



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