R Hackl et al 1986 J. Phys. F: Met. Phys. 16 1299 doi:10.1088/0305-4608/16/9/022
R Hackl, R Kaiser, A Muller and W Weber
Show affiliationsThe Raman spectra of Nb3(Al-Ge) with a superconducting-transition temperature of Tc approximately=20K were measured over the temperature range from 300K to 1.8K. For V3Si, the unfound F2g Raman-active phonon has been observed. In Nb3(Al-Ge) the positions of the Eg and F2g phonon peaks, as well as their temperature dependences, show similarities, but also some significant differences to the other high Tc compounds Nb3Sn and V3Si. This behaviour agrees well with a recent theory of the electron-phonon coupling in high TcA15 materials.
Issue 9 (September 1986)
R Hackl et al 1986 J. Phys. F: Met. Phys. 16 1299
M E Dieckmann et al 2006 New J. Phys. 8 225
R Hackl et al 1983 J. Phys. C: Solid State Phys. 16 1729
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