Diptiman Sen 2003 J. Phys. A: Math. Gen. 36 7517 doi:10.1088/0305-4470/36/27/305
Diptiman Sen
Show affiliationsWe use first-order perturbation theory near the fermionic limit of the δ-function Bose gas in one dimension (i.e. a system of weakly interacting fermions) to study three situations of physical interest. The calculation is done using a pseudopotential which takes the form of a two-body δ''-function interaction. The three cases considered are the behaviour of the system with a hard wall, with a point where the strength of the pseudopotential changes discontinuously, and with a region of finite length where the pseudopotential strength is non-zero (this is sometimes used as a model for a quantum wire). In all cases, we obtain exact expressions for the density to first order in the pseudopotential strength. The asymptotic behaviour of the densities is in agreement with the results obtained from bosonization for a Tomonaga–Luttinger liquid, namely, an interaction dependent power-law decay of the density far from the hard wall, a reflection from the point of discontinuity and transmission resonances for the interacting region of finite length. Our results provide a non-trivial verification of the Tomonaga–Luttinger liquid description of the δ-function Bose gas near the fermionic limit.
71.10.Pm Fermions in reduced dimensions (anyons, composite fermions, Luttinger liquid, etc.)
Quantum gases, liquids and solids
Issue 27 (11 July 2003)
Received 15 January 2003, in final form 21 May 2003
Published 25 June 2003
Diptiman Sen 2003 J. Phys. A: Math. Gen. 36 7517
D del-Castillo-Negrete et al 2004 Plasma Phys. Control. Fusion 46 A105
Thomas P Sotiriou and Theocharis A Apostolatos 2004 Class. Quantum Grav. 21 5727
Masatake Yamaguchi et al 2004 J. Phys.: Condens. Matter 16 3933
S Hild et al 2007 Class. Quantum Grav. 24 3783
D W Flaherty et al 2006 J. Phys. D: Appl. Phys. 39 4393
Steven D Penn et al 2003 Class. Quantum Grav. 20 2917
Anand S Sengupta et al 2002 Class. Quantum Grav. 19 1507
G Parisi 1980 J. Phys. A: Math. Gen. 13 1101
G Isella et al 2007 Semicond. Sci. Technol. 22 S26