Ersan Demiralp and Haluk Beker 2003 J. Phys. A: Math. Gen. 36 7449 doi:10.1088/0305-4470/36/26/315
Ersan Demiralp1,2 and Haluk Beker1
Show affiliationsWe have studied bound states of the Schrödinger equation for an attractive potential with any finite number (P) of Dirac delta-functions in Rn where n = 1, 2, 3, .... The potential is radially symmetric for n ≥ 2 and is given as V(r) = −
2/2m ∑Pi = 1 σiδ(r − ri) where σi > 0, r1 < r2 < ⋯ < rP, and ri
(0, +∞) for n ≥ 2, ri
(−∞, +∞) for n = 1. By separating angular degrees of freedom, the radial equation is obtained for n ≥ 2 and applications of the boundary conditions lead to P transfer matrices which are used to form an equation for the eigenvalues. We have proven that, for given n and l, the bound state solutions of the radial equation are non-degenerate and there are at most P bound state solutions of the radial equation and hence P bound state energy levels for a potential with P attractive Dirac delta-functions. Given l and n ≥ 2, for P = 1, we have shown that there exists one and only one solution of the radial equation if σ1 r1 > 2l + n − 2 and none otherwise. We have also proven that there are at most P positive roots for the equation X22(k) = 0 where X = (X11X21X12X22) = MPMP−1 ... M1 and Mi
SL(2, R) are the particular transfer matrices mentioned above.
81Q10 Selfadjoint operator theory in quantum theory, including spectral analysis
Issue 26 (4 July 2003)
Received 19 February 2003, in final form 25 April 2003
Published 18 June 2003
Ersan Demiralp and Haluk Beker 2003 J. Phys. A: Math. Gen. 36 7449
A A R Neves et al 2006 J. Phys. A: Math. Gen. 39 L293
Michel Côté et al 2002 J. Phys.: Condens. Matter 14 9997
Paul C Abbott 2007 J. Phys. A: Math. Theor. 40 8599
J Jiménez-Mier et al 2001 J. Phys. B: At. Mol. Opt. Phys. 34 L693
Antonio Segatti and Sergey Zelik 2009 Nonlinearity 22 2733
Simo Saarakkala et al 2009 Phys. Med. Biol. 54 6837
Jinzhi Lei et al 2009 Nonlinearity 22 2845
Stephen M Merkowitz et al 1999 Class. Quantum Grav. 16 3035
U P Singh and P C Srivastava 1998 Semicond. Sci. Technol. 13 1219