Electron-phonon interactions in a single modulation-doped GaInAs quantum well

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Published 18 November 2010 Europhysics Letters Association
, , Citation M. Orlita et al 2010 EPL 92 37002 DOI 10.1209/0295-5075/92/37002

0295-5075/92/3/37002

Abstract

Precise absolute far–infra-red magneto-transmission experiments have been performed under magnetic fields up to 28 T on a series of single Ga0.24In0.76As quantum wells n-type modulation doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. This allows us to extract the imaginary part of the optical response function which reveals new singular features related to electron-phonon interactions. In addition to the expected polaronic effects due to the longitudinal (LO) phonons, one observes other interactions with the transverse optical (TO) phonons and a new kind of carrier concentration-dependent interaction with interface phonons. This system provides a unique opportunity to study multiple types of electron-phonon interactions in a single type of compound.

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10.1209/0295-5075/92/37002