S. Zhou et al 2009 EPL 87 27003 doi:10.1209/0295-5075/87/27003
S. Zhou1, J. A. Hoyos2, V. Dobrosavljević1 and E. Miranda3
Show affiliationsWe present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters.
71.70.Gm Exchange interactions
Issue 2 (July 2009)
Received 16 April 2009, accepted for publication 1 July 2009
Published 29 July 2009
S. Zhou et al 2009 EPL 87 27003
Artur Widera et al 2006 New J. Phys. 8 152
Y S Yang and C J Thompson 1991 J. Phys. A: Math. Gen. 24 L279
Stefano Pagliara et al 2007 Nanotechnology 18 175302
R A J Matthews 1995 Eur. J. Phys. 16 172
Henning Schomerus and Martin Sieber 1997 J. Phys. A: Math. Gen. 30 4537
A M Ozorio de Almeida and J H Hannay 1987 J. Phys. A: Math. Gen. 20 5873
Henning Schomerus 1998 J. Phys. A: Math. Gen. 31 4167
T Bartsch et al 1999 J. Phys. A: Math. Gen. 32 3013
M Sieber 1996 J. Phys. A: Math. Gen. 29 4715