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Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy

H.-J. Noh1,2, H. Koh2, S.-J. Oh2, J.-H. Park3, H.-D. Kim4, J. D. Rameau5,6, T. Valla5, T. E. Kidd5, P. D. Johnson5, Y. Hu5 and Q. Li5

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The electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the Γ-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing EF near the \underline{\Gamma} -point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3.


PACS

72.15.Jf Thermoelectric and thermomagnetic effects

79.60.-i Photoemission and photoelectron spectra

71.20.Nr Semiconductor compounds

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 5 (March 2008)

Received 23 October 2007, accepted for publication 14 January 2008

Published 12 February 2008



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