H.-J. Noh et al 2008 EPL 81 57006 doi:10.1209/0295-5075/81/57006
H.-J. Noh1,2, H. Koh2, S.-J. Oh2, J.-H. Park3, H.-D. Kim4, J. D. Rameau5,6, T. Valla5, T. E. Kidd5, P. D. Johnson5, Y. Hu5 and Q. Li5
Show affiliationsThe electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the Γ-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing EF near the
-point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3.
72.15.Jf Thermoelectric and thermomagnetic effects
Issue 5 (March 2008)
Received 23 October 2007, accepted for publication 14 January 2008
Published 12 February 2008
H.-J. Noh et al 2008 EPL 81 57006
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