M. Dumm et al 2005 Europhys. Lett. 72 103 doi:10.1209/epl/i2005-10207-y
Mobility gap in intermediate valent TmSe
M. Dumm1, B. Gorshunov1,2, M. Dressel1 and T. Matsumura3
Show affiliationsThe infrared optical conductivity of the intermediate-valence compound TmSe reveals clear signatures for hybridization of light d- and heavy f-electronic states with m* ≈ 1.6m0 and m* ≈ 16m0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominates the low-frequency response while at low temperatures (TN < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.
- PACS
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71.28.+d Narrow-band systems; intermediate-valence solids
75.30.Mb Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
- Subjects
- Dates
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Issue 1 (October 2005)
Received 2 May 2005, accepted for publication 3 August 2005, in final form 3 August 2005
Published 31 August 2005
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Mobility gap in intermediate valent TmSe
M. Dumm et al 2005 Europhys. Lett. 72 103
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