S. Yuasa et al 2000 Europhys. Lett. 52 344 doi:10.1209/epl/i2000-00445-5
S. Yuasa1, T. Sato2, E. Tamura3, Y. Suzuki1,3, H. Yamamori1, K. Ando1 and T. Katayama1
Show affiliationsA strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the TMR of Fe/Al2O3/Fe50Co50 tunnel junctions with single-crystal Fe electrodes of different crystal orientations and found that the TMR ratio increased from 13% to 42% at 2K (8% to 26% at room temperature) when the crystal orientation was changed from (100) to (211). Such a TMR anisotropy could be explained in terms of the anisotropic spin polarization of Fe bulk and/or interface electronic states. The importance of the "momentum-filtering" effect of the tunnel barrier was also discussed.
Issue 3 (1 November 2000)
Received 5 June 2000, accepted for publication 15 September 2000, in final form 15 September 2000
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