M A Alam and M S Lundstrom 1994 Semicond. Sci. Technol. 9 862 doi:10.1088/0268-1242/9/5S/125
Simulation of compound semiconductor devices using a scattering matrix approach
M A Alam and M S Lundstrom
Show affiliationsThe scattering matrix approach (SMA) is a new technique for solving the space-dependent Boltzmann equation in semiconductor devices. In this paper we apply the SMA to examine electron transport in a simple AlGaAs/GaAs heterojunction bipolar transistor. The results demonstrate that the scattering matrix approach resolves off-equilibrium transport with the accuracy of a Monte Carlo simulation while also treating near-equilibrium transport and injection across high-energy barriers. These results establish the viability of the SMA for simulating carrier transport in advanced, compound semiconductor devices.
- PACS
-
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
- Subjects
- Dates
-
Issue 5S (May 1994)
-
Simulation of compound semiconductor devices using a scattering matrix approach
M A Alam and M S Lundstrom 1994 Semicond. Sci. Technol. 9 862
-
Active vibration suppression of a composite I-beam using fuzzy positive position control
H Gu and G Song 2005 Smart Mater. Struct. 14 540
-
Measurement of
wavelengths in helium-like sulphur
D J H Howie et al 1996 J. Phys. B: At. Mol. Opt. Phys. 29 927
-
Many-pole model of inelastic losses applied to calculations of XANES
J J Kas et al 2009 J. Phys.: Conf. Ser. 190 012009
-
Carbon fibers as a novel material for high-performance microelectromechanical systems (MEMS)
Shahyaan Desai et al 2006 J. Micromech. Microeng. 16 1403
-
Bayesian inference of a negative quantity from positive measurement results
D Calonico et al 2009 Metrologia 46 267
-
On the method of Lavrentiev regularization for nonlinear ill-posed problems
U Tautenhahn 2002 Inverse Problems 18 191
-
Probing the involvement of non-magnetic Sr ion in the ferromagnetic transition of SrRuO3, using XAFS
Debdutta Lahiri et al 2009 J. Phys.: Conf. Ser. 190 012099
-
Spectroscopy and dissociative recombination of the lowest rotational states of H+3
A Petrignani et al 2009 J. Phys.: Conf. Ser. 192 012022
-
Über die Informationsfähigkeit eines Meβgerätes
W Masin 1975 Metrologia 11 169
Users also read
What's this?- Evidence of resonant intersubband optical phonon scattering in quantum wires
- Sawtooth-like thermopower oscillations of a quantum dot in the Coulomb blockade regime
- A Monte Carlo solution of the Wigner transport equation
Related review articles
What's this?- Graphene field-effect transistors
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- Application and electronic structure of high-permittivity dielectrics