S J Hawksworth et al 1992 Semicond. Sci. Technol. 7 1499 doi:10.1088/0268-1242/7/12/013
S J Hawksworth, R T Grimes, E P Pearl, M B Stanaway, J M Chamberlain, J L Dunn, C A Bates, S P Najda, C J G M Langerak, J Singleton and C R Stanley
Show affiliationsRecently optically detected cyclotron resonance spectra reported by Ahmed et al. in ultra-pure n-GaAs have revealed low-energy structure associated with the cyclotron resonance. The authors have investigated the far-infrared photoconductive response under conditions of cyclotron resonance in these n-GaAs ( mu approximately=400000 cm2 V-1 s-1) samples and also in n-InP ( mu approximately=170000 cm2 V-1 s-1) samples grown by MBE. The suggestion that the structure arises from transitions involving non-parabolicity and polaron coupling effects is discounted using a five-level P.p calculation as found in the literature. Other possible origins, supported by appropriate theory, are suggested for this structure.
73.50.Pz Photoconduction and photovoltaic effects
71.20.Nr Semiconductor compounds
72.20.Fr Low-field transport and mobility; piezoresistance
72.10.-d Theory of electronic transport; scattering mechanisms
Issue 12 (December 1992)
S J Hawksworth et al 1992 Semicond. Sci. Technol. 7 1499
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