G Papaioannou et al 1991 Semicond. Sci. Technol. 6 937 doi:10.1088/0268-1242/6/9/018
G Papaioannou, B Ioannou-Sougleridis and S Cristoloveanu
Show affiliationsThe carrier trapping properties in MOS transistors fabricated on silicon on insulator substrates synthesized by deep oxygen implantation (SIMOX) are investigated by photo-induced current transient spectroscopy. The adaptation of the PICTS method to depletion-mode MOS transistors is described. The upper and lower half band gap are probed by using N-channel and P-channel transistors integrated on the same chip. The density of states at the buried Si-SiO2 interface is in the region of 1012 cm-2 eV-1. A localized level of electron traps, presumably associated with dislocations, is detected at 0.29 eV below the conduction band.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Nr Semiconductor compounds
85.30.De Semiconductor-device characterization, design, and modeling
Issue 9 (September 1991)
G Papaioannou et al 1991 Semicond. Sci. Technol. 6 937
R T Grimes et al 1990 Semicond. Sci. Technol. 5 305
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