M O Manasreh et al 1990 Semicond. Sci. Technol. 5 994 doi:10.1088/0268-1242/5/9/013
M O Manasreh, W C Mitchel and D W Fischer
Show affiliationsFar-infrared Fourier transform spectroscopy and photocurrent (PPC) in semi-insulating bulk GaAs after illumination at low temperatures with either white light or 1.1 eV light. The samples can be classified into two categories; one which does not exhibit PPC and one which does. Electronic energy levels of shallow acceptors (carbon and zinc) are observed only in samples from the first category after photoquenching EL2. Both shallow energy levels and PPC are thermally quenched at 80 K and recovered after photo-illumination at T<or=10 K while EL2 is still in its metastable state. Thus, an unidentified defect complex is responsible for these processes. The absence of PPC and infrared absorption spectra of shallow acceptors from samples in the first category suggests that defects other than normal EL2 are involved in compensating carbon and zinc after photoquenching.
78.30.Fs III-V and II-VI semiconductors
78.20.-e Optical properties of bulk materials and thin films
Issue 9 (September 1990)
M O Manasreh et al 1990 Semicond. Sci. Technol. 5 994
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R S Mackay and J D Meiss 1992 Nonlinearity 5 149
S F Masri et al 1992 Smart Mater. Struct. 1 45
D Milic et al 1996 Quantum Semiclass. Opt. 8 629
R S Davis 1995 Meas. Sci. Technol. 6 227
D R A Webb 1974 J. Phys. E: Sci. Instrum. 7 453
J B Parse and J A Wert 1993 Modelling Simul. Mater. Sci. Eng. 1 275
Takamitsu Okumura et al 2003 J. Opt. A: Pure Appl. Opt. 5 S269
Th Kraus et al 1997 J. Micromech. Microeng. 7 196