M O Manasreh et al 1990 Semicond. Sci. Technol. 5 994 doi:10.1088/0268-1242/5/9/013
M O Manasreh, W C Mitchel and D W Fischer
Show affiliationsFar-infrared Fourier transform spectroscopy and photocurrent (PPC) in semi-insulating bulk GaAs after illumination at low temperatures with either white light or 1.1 eV light. The samples can be classified into two categories; one which does not exhibit PPC and one which does. Electronic energy levels of shallow acceptors (carbon and zinc) are observed only in samples from the first category after photoquenching EL2. Both shallow energy levels and PPC are thermally quenched at 80 K and recovered after photo-illumination at T<or=10 K while EL2 is still in its metastable state. Thus, an unidentified defect complex is responsible for these processes. The absence of PPC and infrared absorption spectra of shallow acceptors from samples in the first category suggests that defects other than normal EL2 are involved in compensating carbon and zinc after photoquenching.
78.30.Fs III-V and II-VI semiconductors
78.20.-e Optical properties of bulk materials and thin films
Issue 9 (September 1990)
M O Manasreh et al 1990 Semicond. Sci. Technol. 5 994
David Syphers et al. 2009 ApJS 185 20
F Fariborzi et al 1997 Smart Mater. Struct. 6 540
Patrick B. Hall et al. 2008 The Astronomical Journal 136 76
R Mir et al 2007 New J. Phys. 9 287
Matjaž Perc and Attila Szolnoki 2007 New J. Phys. 9 267
G Berkolaiko 2006 J. Phys. A: Math. Gen. 39 L77
Iwan Jensen 2006 J. Phys.: Conf. Ser. 42 163
Dennis Kretschmann and Reinhard F Werner 2004 New J. Phys. 6 26
Fernando A Monteiro Santos et al 2009 J. Geophys. Eng. 6 390