R T Grimes et al 1990 Semicond. Sci. Technol. 5 305 doi:10.1088/0268-1242/5/4/004
R T Grimes, M B Stanaway, J M Chamberlain, J L Dunn, M Henini, O H Hughes and G Hill
Show affiliationsThe far infrared (FIR) photoconductive response of silicon-doped GaAs/AlGaAs multi-quantum wells (MQWS) at 4.2 K reveals evidence of several transitions from the ground state to higher excited states of the confined impurity (e.g. 1s-3d+1, 1s-3p+1, 1s-3d+2, 1s-4d+2 etc.). Assignments are made by comparison with the bulk case and with available theory. Linewidths of the 1s-2p+ transition indicate that in the most favourable case minimum redistribution of the silicon dopant occurs which permits observation of higher state transitions.
78.30.Fs III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Condensed matter: electrical, magnetic and optical
Issue 4 (April 1990)
R T Grimes et al 1990 Semicond. Sci. Technol. 5 305
T R Linderoth et al 2005 New J. Phys. 7 13
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F W O Da Silva et al 1989 Semicond. Sci. Technol. 4 565
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