F W O Da Silva et al 1989 Semicond. Sci. Technol. 4 565 doi:10.1088/0268-1242/4/7/012
F W O Da Silva, C Raisin, M Silga, M Nouaoura and L Lassabatere
Show affiliationsThe chemical preparation of GaSb(001) substrates was performed by Br2-HCl-HNO3-CH3COOH solution. The removed layer thickness was evaluated as a function of the constituent concentrations and the etching time. The surface quality was controlled by SEM, RHEED and AES. With this treatment, excellent surface morphology of substrates and growth film is obtained.
68.47.Fg Semiconductor surfaces
68.55.A- Nucleation and growth
68.49.Jk Electron scattering from surfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.35.B- Structure of clean surfaces (and surface reconstruction)
Issue 7 (July 1989)
F W O Da Silva et al 1989 Semicond. Sci. Technol. 4 565
1999 Distrib. Syst. Engng. 6
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