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Chemical preparation of GaSb(001) substrates prior to MBE

F W O Da Silva, C Raisin, M Silga, M Nouaoura and L Lassabatere

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The chemical preparation of GaSb(001) substrates was performed by Br2-HCl-HNO3-CH3COOH solution. The removed layer thickness was evaluated as a function of the constituent concentrations and the etching time. The surface quality was controlled by SEM, RHEED and AES. With this treatment, excellent surface morphology of substrates and growth film is obtained.


PACS

68.47.Fg Semiconductor surfaces

68.55.A- Nucleation and growth

68.49.Jk Electron scattering from surfaces

81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

68.35.B- Structure of clean surfaces (and surface reconstruction)

Subjects

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 7 (July 1989)



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