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Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship

G L J A Rikken, P Wyder, J M Chamberlain, R T Grimes and D P Halliday

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The authors have obtained evidence from galvanomagnetic and PL measurements that the electron mobility compensation ratio relationship of Taguchi and Yamada (1987) provides more realistic values of NA/ND than Walukiewicz and co-workers earlier relationship (1980). They also point out the possible use of FIR photosignal decay measurements as a means of determining NA and ND, particularly in the difficult case of low-compensation materials.


PACS

72.20.Fr Low-field transport and mobility; piezoresistance

72.20.My Galvanomagnetic and other magnetotransport effects

78.55.Cr III-V semiconductors

78.30.Fs III-V and II-VI semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 4 (April 1988)



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