Aniruddha Konar et al 2012 Semicond. Sci. Technol. 27 024018 doi:10.1088/0268-1242/27/2/024018
Charge transport in non-polar and semi-polar III-V nitride heterostructures
FREE ISSUEAniruddha Konar, Amit Verma, Tian Fang, Pei Zhao, Raj Jana and Debdeep Jena
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Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed.
- PACS
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73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
- Subjects
- Dates
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Issue 2 (8 February 2012)
Received 10 October 2011, in final form 13 December 2011
Published 19 January 2012
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Charge transport in non-polar and semi-polar III-V nitride heterostructures
Aniruddha Konar et al 2012 Semicond. Sci. Technol. 27 024018
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