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Integrated twin modulator switches through MMI splitting and electroabsorption modulation

S Y Lee1, H Yang2, Y C Li1, C W Lee3 and T Mei1

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We present a 1 × 2 multimode interference splitter integrated with duo electroabsorption modulator based switches, one at each output arm. The material structure consists of an InGaAlAs/InGaAlAs multiple-quantum-well active core layer with a dual depletion region active core structure and a large optical cavity waveguide design. The switches exhibited an extinction ratio of up to 10 dB at a driving voltage-swing of 2.0 V.


PACS

84.32.Dd Connectors, relays, and switches

85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

42.79.Fm Reflectors, beam splitters, and deflectors

42.79.Gn Optical waveguides and couplers

Subjects

Electronics and devices

Optics, quantum optics and lasers

Dates

Issue 12 (December 2009)

Received 17 July 2009, in final form 15 September 2009

Published 13 November 2009



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