S Y Lee et al 2009 Semicond. Sci. Technol. 24 125004 doi:10.1088/0268-1242/24/12/125004
S Y Lee1, H Yang2, Y C Li1, C W Lee3 and T Mei1
Show affiliationsWe present a 1 × 2 multimode interference splitter integrated with duo electroabsorption modulator based switches, one at each output arm. The material structure consists of an InGaAlAs/InGaAlAs multiple-quantum-well active core layer with a dual depletion region active core structure and a large optical cavity waveguide design. The switches exhibited an extinction ratio of up to 10 dB at a driving voltage-swing of 2.0 V.
84.32.Dd Connectors, relays, and switches
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
Issue 12 (December 2009)
Received 17 July 2009, in final form 15 September 2009
Published 13 November 2009
S Y Lee et al 2009 Semicond. Sci. Technol. 24 125004
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