Li-Hong Zhu et al 2009 Semicond. Sci. Technol. 24 125003 doi:10.1088/0268-1242/24/12/125003
Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells
Li-Hong Zhu, Qing-Hong Zheng and Bao-Lin Liu
Show affiliationsTriangular-shaped InGaN/GaN multiple quantum wells (MQWs) grown on a sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs). The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the internal quantum efficiency (IQE) of the LEDs with triangular-shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures. The electroluminescence (EL) spectra of the two series devices have been comparatively studied as functions of injection current. It was found that the device with the triangular-shaped MQW structure exhibited a stronger intensity and a narrower linewidth. Furthermore, the peak energy is nearly independent of the injection current, indicating that the triangular MQW LEDs are more efficient and stable than the rectangular ones.
- PACS
- Subjects
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Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
- Dates
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Issue 12 (December 2009)
Received 8 July 2009, in final form 30 September 2009
Published 3 November 2009
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Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells
Li-Hong Zhu et al 2009 Semicond. Sci. Technol. 24 125003
-
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
M P Mikhailova et al 2004 Semicond. Sci. Technol. 19 R109
-
Tungsten accumulation in H-mode plasmas of JT-60U
T. Nakano et al 2009 Nucl. Fusion 49 115024
-
Universal Baxterization for
-graded Hopf algebras
K A Dancer et al 2007 J. Phys. A: Math. Theor. 40 F1069
-
Numerical methods for Hamiltonian PDEs
Thomas J Bridges and Sebastian Reich 2006 J. Phys. A: Math. Gen. 39 5287
-
Gas-Phase Water in the Surface Layer of Protoplanetary Disks
C. Dominik et al 2005 ApJ 635 L85
-
A valence force field for the silicon crystal
S L Altmann et al 1982 J. Phys. C: Solid State Phys. 15 5581
-
Dissociative recombination in e-H2+ collisions
C Derkits et al 1979 J. Phys. B: At. Mol. Phys. 12 L529
-
On static solutions in 2D dilaton gravity with scalar matter
D Grumiller and D Mayerhofer 2004 Class. Quantum Grav. 21 5893
-
'Proper acceleration' of a null geodesic in curved spacetime
Guihua Tian et al 2002 Class. Quantum Grav. 19 2777
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