Debashis Panda et al 2009 Semicond. Sci. Technol. 24 115020 doi:10.1088/0268-1242/24/11/115020
Debashis Panda1, Achintya Dhar and Samit K Ray1
Show affiliationsMetal-oxide-semiconductor capacitors with a tetralayer structure consisting of nickel nanocrystals sandwiched between SiO2 and HfO2 tunnel and Al2O3 cap oxides were fabricated on p-Si substrates. Cross-sectional transmission electron micrographs revealed the formation of nickel nanocrystals having size 5–7 nm. The maximum charge injection capability (ΔVFB ~ 7.8 V; @ ± 15 V) of nanocrystals was observed for the device RTA annealed at 950 °C for a minute. Charge storage and leakage current characteristics of the nanocrystal memory structures were studied through capacitance–voltage and current–voltage measurements, respectively. The improved retention properties with good thermal stability and endurance properties were also studied.
84.30.Sk Pulse and digital circuits
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Issue 11 (November 2009)
Received 16 July 2009, in final form 19 August 2009
Published 27 October 2009
Debashis Panda et al 2009 Semicond. Sci. Technol. 24 115020
Liu Bing-Ce et al 2009 Chinese Phys. Lett. 26 117101
J-D Grunwaldt 2009 J. Phys.: Conf. Ser. 190 012151
C Hin 2009 J. Phys. D: Appl. Phys. 42 225309
S Erenburg et al 2009 J. Phys.: Conf. Ser. 190 012121
Yonggen Xu et al 2009 J. Opt. A: Pure Appl. Opt. 11 125410
Manwai Yuen 2009 Class. Quantum Grav. 26 235011
Xinglong Gou et al 2009 Nanotechnology 20 495501
B Behera et al 2009 J. Phys. G: Nucl. Part. Phys. 36 125105
R Bacewicz et al 2009 J. Phys.: Conf. Ser. 190 012067