E Alarcón-Lladó et al 2009 Semicond. Sci. Technol. 24 115019 doi:10.1088/0268-1242/24/11/115019
E Alarcón-Lladó1, J Ibáñez1, R Cuscó1, L Artús1, S V Novikov2 and C T Foxon2
Show affiliationsWe perform visible and ultraviolet (UV) Raman-scattering experiments to study a series of undoped and Mn-doped c-GaN thin films grown by plasma-assisted molecular beam epitaxy under Ga-rich and N-rich conditions. The visible, non-resonant experiments confirm that the Ga-rich growth yields the improved crystal quality. New Raman features, most probably related to Mn-induced disorder, show up in the spectra of the c-GaMnN epilayers grown under N-rich conditions. We find that the introduction of an AlN buffer favors the growth of the hexagonal phase. In the UV spectra of the samples with better crystal quality, we detect multiphonon mA1(LO) peaks up to m = 4 together with strong PL signal from c-GaN. In the more disordered samples the PL emission is quenched, and this allows us to detect multiphonons up to m = 6. The intensity of the multiphonon peaks can be used to assess the crystal quality of the c-GaN and c-GaMnN samples.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
78.30.Fs III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue 11 (November 2009)
Received 17 July 2009
Published 27 October 2009
E Alarcón-Lladó et al 2009 Semicond. Sci. Technol. 24 115019
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